Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

被引：135

作者：

Chowdhury, Srabanti ^{[1
]}

Swenson, Brian L. ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 06期

关键词：

AlGaN/GaN; CF4 plasma treatment; current aperture vertical electron transistor (CAVET); Mg implanted; normally off; threshold voltage;

D O I：

10.1109/LED.2008.922982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 x 10(3) A/cm(2) (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (g(m)) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in g(m) by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the g(m) varied directly with the time of exposure. There was no significant dispersion in these devices.

引用

页码：543 / 545

页数：3

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