Manifestations of multiple-carrier charge transport in the magnetostructurally ordered phase of BaFe2As2

被引:69
作者
Ishida, S. [1 ,2 ,3 ]
Liang, T. [1 ,2 ,3 ]
Nakajima, M. [1 ,2 ,3 ]
Kihou, K. [2 ,3 ]
Lee, C. H. [2 ,3 ]
Iyo, A. [2 ,3 ]
Eisaki, H. [2 ,3 ]
Kakeshita, T. [1 ,3 ]
Kida, T. [3 ,4 ]
Hagiwara, M. [3 ,4 ]
Tomioka, Y. [2 ,3 ]
Ito, T. [2 ,3 ]
Uchida, S. [1 ,3 ]
机构
[1] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[3] Transformat Res Project Iron Pnictides, JST, Tokyo 1020075, Japan
[4] Osaka Univ, KYOKUGEN, Osaka 5608531, Japan
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 18期
基金
日本科学技术振兴机构; 日本学术振兴会;
关键词
RESISTIVITY; ANISOTROPY;
D O I
10.1103/PhysRevB.84.184514
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the transport properties of BaFe2As2 single crystals before and after annealing with BaAs powder. The annealing remarkably improves transport properties, in particular, the magnitude of residual resistivity, which decreases by a factor of more than 10. From the resistivity measurement on detwinned crystals, we found that the anisotropy of the in-plane resistivity is remarkably diminished after annealing, indicative of dominant contributions to the charge transport from the carriers with isotropic and high mobility below magnetostructural transition temperature T-s and the absence of nematic state above T-s. We found that the Hall resistivity shows strong nonlinearity against magnetic field, and the magnetoresistance becomes very large at low temperatures. These results give evidence for the manifestation of multiple carriers with distinct characters in the ordered phase below T-s. By analyzing the magnetic-field dependences, we found that at least three carriers equally contribute to the charge transport in the ordered phase, which is in good agreement with the results of recent quantum oscillation measurements.
引用
收藏
页数:7
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共 25 条
[1]   Quantum magnetoresistance [J].
Abrikosov, AA .
PHYSICAL REVIEW B, 1998, 58 (05) :2788-2794
[2]   Quantum oscillations in the parent pnictide BaFe2As2: Itinerant electrons in the reconstructed state [J].
Analytis, James G. ;
McDonald, Ross D. ;
Chu, Jiun-Haw ;
Riggs, Scott C. ;
Bangura, Alimamy F. ;
Kucharczyk, Chris ;
Johannes, Michelle ;
Fisher, I. R. .
PHYSICAL REVIEW B, 2009, 80 (06)
[3]   In-plane anisotropy of electrical resistivity in strain-detwinned SrFe2As2 [J].
Blomberg, E. C. ;
Tanatar, M. A. ;
Kreyssig, A. ;
Ni, N. ;
Thaler, A. ;
Hu, Rongwei ;
Bud'ko, S. L. ;
Canfield, P. C. ;
Goldman, A. I. ;
Prozorov, R. .
PHYSICAL REVIEW B, 2011, 83 (13)
[4]   THE 2-BAND EFFECT IN CONDUCTION [J].
CHAMBERS, RG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1952, 65 (395) :903-910
[5]   In-Plane Resistivity Anisotropy in an Underdoped Iron Arsenide Superconductor [J].
Chu, Jiun-Haw ;
Analytis, James G. ;
De Greve, Kristiaan ;
McMahon, Peter L. ;
Islam, Zahirul ;
Yamamoto, Yoshihisa ;
Fisher, Ian R. .
SCIENCE, 2010, 329 (5993) :824-826
[6]   Neutron-Diffraction Measurements of Magnetic Order and a Structural Transition in the Parent BaFe2As2 Compound of FeAs-Based High-Temperature Superconductors [J].
Huang, Q. ;
Qiu, Y. ;
Bao, Wei ;
Green, M. A. ;
Lynn, J. W. ;
Gasparovic, Y. C. ;
Wu, T. ;
Wu, G. ;
Chen, X. H. .
PHYSICAL REVIEW LETTERS, 2008, 101 (25)
[7]   Both Electron and Hole Dirac Cone States in Ba(FeAs)2 Confirmed by Magnetoresistance [J].
Huynh, Khuong K. ;
Tanabe, Yoichi ;
Tanigaki, Katsumi .
PHYSICAL REVIEW LETTERS, 2011, 106 (21)
[8]   A matrix formalism for the Hall effect in multicarrier semiconductor systems [J].
Kim, JS .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) :3187-3194
[9]   Electronic structure of detwinned BaFe2As2 from photoemission and first principles [J].
Kim, Yeongkwan ;
Oh, Hyungju ;
Kim, Chul ;
Song, Dongjoon ;
Jung, Wonsig ;
Kim, Beomyoung ;
Choi, Hyoung Joon ;
Kim, Changyoung ;
Lee, Bumsung ;
Khim, Seunghyun ;
Kim, Hyungjoon ;
Kim, Keehoon ;
Hong, Jongbeom ;
Kwon, Yongseung .
PHYSICAL REVIEW B, 2011, 83 (06)
[10]   Magnetic and structural transitions in layered iron arsenide systems:: AFe2As2 versus RFeAsO [J].
Krellner, C. ;
Caroca-Canales, N. ;
Jesche, A. ;
Rosner, H. ;
Ormeci, A. ;
Geibel, C. .
PHYSICAL REVIEW B, 2008, 78 (10)