Length-scale dominated thermal fatigue behavior in nanocrystalline Au interconnect lines

被引：0

作者：

Chen, Hong-Lei ^{[1
,2
]}

Luo, Xue-Mei ^{[1
]}

Wang, Dong ^{[3
,4
]}

Ziegler, Mario ^{[5
]}

Huebner, Uwe ^{[5
]}

Zhang, Bin ^{[6
]}

Zhang, Guang-Ping ^{[1
]}

机构：

[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China

[2] Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China

[3] TU Ilmenau, Inst Mat Engn, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany

[4] TU Ilmenau, Inst Micro & Nanotechnol MacroNano, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany

[5] Leibniz Inst Photon Technol Jena IPHT, Albert Einstein Str 9, D-07745 Jena, Germany

[6] Northeastern Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Anisotropy & Texture Mat, 3-11 Wenhua Rd, Shenyang 110819, Peoples R China

来源：

MATERIALIA | 2019年 / 7卷

基金：

中国国家自然科学基金;

关键词：

Thin film; Thermal fatigue; Size effect; Nanocrystalline; Interconnect; THIN METAL-FILMS; MECHANICAL-PROPERTIES; CU FILMS; DAMAGE; SIZE; DEFORMATION; RESISTANCE; THICKNESS;

D O I：

10.1016/j.mtla.2019.100337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal fatigue behavior of nanocrystalline Au lines with different thicknesses (50, 100, and 200 nm) and line widths (5, 10, and 15 mu m) was investigated by applying alternating current to generate thermal cyclic stain. The thermal fatigue life was found to show a strong scale effect, i.e., thinner films had higher thermal fatigue resistance and sustained higher temperature oscillation. However, no obvious line width effect was found. Besides, the thermal fatigue damage behavior also shows evident dependence on the line thickness and the applied strain range. A thermal fatigue mechanism map of nanocrystalline films is proposed based on the experimental evidence and theoretical evaluation. Atom diffusion and dislocation activity were found to be two important mechanisms in thermal fatigue, and atom diffusion is the main factor to control the fatigue failure.

引用

页数：9