Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy

被引：16

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
]}

Miritello, M. ^{[2
]}

d'Acapito, F. ^{[3
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,4
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] MATIS IMM CNR, I-95123 Catania, Italy

[3] GILDA CRG, ESRF, CNR IOM OGG, F-38043 Grenoble, France

[4] CNR Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 12期

关键词：

THIN-FILMS; CRYSTALLIZATION; MEMORY;

D O I：

10.1149/2.019112esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The local order of amorphous Ge2Sb2Te5 films (50 nm) prepared by sputtering (AD), melt quenching (MQ), or ion irradiation (II) has been probed by EXAFS and Raman spectroscopy. The Ge K edge of the AD sample shows a stronger contribution from homopolar Ge-Ge bonds with respect to irradiated films. Raman spectroscopy measurements indicate a greater abundance of homopolar Te-Te bonds in AD film with respect to MQ and II. Irradiation of deposited amorphous GST films results in a reduction of "wrong" homopolar bonds. This variation is probably the origin of the faster crystallization speed of MQ and II amorphous samples. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.019112esl] All rights reserved.

引用

页码：H480 / H482

页数：3

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