Polymorphism of Amorphous Ge2Sb2Te5 Probed by EXAFS and Raman Spectroscopy

被引：16
作者：
Carria, E. [1 ,2 ]
Mio, A. M. [1 ]
Gibilisco, S. [1 ]
Miritello, M. [2 ]
d'Acapito, F. [3 ]
Grimaldi, M. G. [1 ,2 ]
Rimini, E. [1 ,4 ]
机构：
[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[2] MATIS IMM CNR, I-95123 Catania, Italy
[3] GILDA CRG, ESRF, CNR IOM OGG, F-38043 Grenoble, France
[4] CNR Ist Microelettron & Microsistemi, I-95121 Catania, Italy
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 12期
关键词：
THIN-FILMS; CRYSTALLIZATION; MEMORY;
D O I：
10.1149/2.019112esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The local order of amorphous Ge2Sb2Te5 films (50 nm) prepared by sputtering (AD), melt quenching (MQ), or ion irradiation (II) has been probed by EXAFS and Raman spectroscopy. The Ge K edge of the AD sample shows a stronger contribution from homopolar Ge-Ge bonds with respect to irradiated films. Raman spectroscopy measurements indicate a greater abundance of homopolar Te-Te bonds in AD film with respect to MQ and II. Irradiation of deposited amorphous GST films results in a reduction of "wrong" homopolar bonds. This variation is probably the origin of the faster crystallization speed of MQ and II amorphous samples. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.019112esl] All rights reserved.
引用
收藏
页码：H480 / H482
页数：3
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