Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures

被引：0

作者：

Grigelionis, T. ^{[1
]}

Fobelets, K. ^{[2
]}

Vincent, B. ^{[3
]}

Mitard, J. ^{[3
]}

De Jaeger, B. ^{[3
]}

Simoen, E. ^{[3
]}

Hoffman, T. Y. ^{[3
]}

Yavorskiy, D. ^{[1
]}

Lusakowski, J. ^{[1
]}

机构：

[1] Univ Warsaw, Inst Expt Phys, Fac Phys, PL-00681 Warsaw, Poland

[2] Univ London Imperial Coll Sci Technol & Med, London SW7 2BT, England

[3] IMEC, B-3001 Louvain, Belgium

来源：

ACTA PHYSICA POLONICA A | 2011年 / 120卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.120.933

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility mu as a function of the gate polarization (V(G)). Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to V(G). To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic mu(V(G)) dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.

引用

页码：933 / 935

页数：3

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