Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range

被引：51

作者：

Koo, Hyunji ^{[1
]}

Kim, Choul-Young ^{[2
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Chungnam Natl Univ, Daejeon, South Korea

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2015年 / 62卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

High efficiency; J-band; millimeter wave; push-push oscillator; terahertz; transformer; voltage-controlled oscillator (VCO); wide tuning range; NM CMOS; BULK CMOS; TECHNOLOGY; POWER; GENERATOR;

D O I：

10.1109/TCSI.2015.2426957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A push-push transformer-based voltage-controlled oscillator (VCO) is proposed and analyzed to achieve high efficiency and a wide tuning range at sub-terahertz (THz) frequencies. Analyses show that the coupling factor of the transformer to obtain high output power (P-OUT) has to be carefully chosen by consideration of gate-to-drain voltage gain as well as matching impedances seen from the drain and to the gate of a VCO transistor at the 2nd harmonic frequency (2f(o)). Analysis also shows that the transformer-based resonator allows a wide tuning range. In addition, it has been shown that the introduction of a parallel inductor to a varactor leads to high P-OUT and low phase noise. The proposed 239 GHz VCO with a 65 nm CMOS process demonstrates the high efficiency of 1.45%, the P-OUT of -4.8 dBm, and the wide tuning range of 12.5% with a supply voltage of 1.2 V.

引用

页码：1883 / 1893

页数：11

共 25 条

[21] 216-and 316-GHz 45-nm SOI CMOS Signal Sources Based on a Maximum-Gain Ring Oscillator Topology [J].