Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs/based HEMT

被引：54
作者：
Lenka, T. R. [1 ]
Panda, A. K. [1 ]
机构：
[1] Natl Inst Sci & Technol, Berhampur 761008, Odisha, India
来源：
SEMICONDUCTORS | 2011年 / 45卷 / 05期
关键词：
MOBILITY; POLARIZATION; SIMULATION; ALN/GAN; MODEL;
D O I：
10.1134/S1063782611050198
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature. DOI: 10.1134/S1063782611050198
引用
收藏
页码：650 / 656
页数：7
相关论文
共 20 条
[1]   Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].
Ambacher, O ;
Foutz, B ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Sierakowski, AJ ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Mitchell, A ;
Stutzmann, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344
[2]  
ANDO Y, 2003, IEEE ELECTR DEVICE L, V24, P240
[3]   Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT [J].
Brannick, A. ;
Zakhleniuk, N. A. ;
Ridley, B. K. ;
Eastman, L. F. ;
Shealy, J. R. ;
Schaff, W. J. .
MICROELECTRONICS JOURNAL, 2009, 40 (03) :410-412
[4]   A compact C-V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications [J].
Gangwani, Parvesh ;
Pandey, Sujata ;
Haldar, Subhasis ;
Gupta, Mridula ;
Gupta, R. S. .
MICROELECTRONICS JOURNAL, 2007, 38 (8-9) :848-854
[5]   Polarization dependent analysis of AlGaN/GaN HEMT for high power applications [J].
Gangwani, Parvesh ;
Pandey, Sujata ;
HaIdar, Subhasis ;
Gupta, Mridula ;
Gupta, R. S. .
SOLID-STATE ELECTRONICS, 2007, 51 (01) :130-135
[6]   Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT [J].
Huque, M. A. ;
Eliza, S. A. ;
Rahman, T. ;
Huq, H. F. ;
Islam, S. K. .
SOLID-STATE ELECTRONICS, 2009, 53 (03) :341-348
[7]   Self-consistent subband calculations of AlGaN/GaN single heterojunctions [J].
Lee, KS ;
Yoon, DH ;
Bae, SB ;
Park, MR ;
Kim, GH .
ETRI JOURNAL, 2002, 24 (04) :270-279
[8]  
LENKA TR, 2009, P 15 IWPSD, P117
[9]   Simulation and analysis of metamorphic high electron mobility transistors [J].
Lin, Jia-Chuan ;
Yang, Po-Yu ;
Tsai, Wei-Chih .
MICROELECTRONICS JOURNAL, 2007, 38 (02) :251-254
[10]   A new small-signal modeling and extraction method in AlGaN/GaN HEMTs [J].
Lu, Jing ;
Wang, Yan ;
Ma, Long ;
Yu, Zhiping .
SOLID-STATE ELECTRONICS, 2008, 52 (01) :115-120
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