A 19.0% efficiency achieved in CuOx-based inverted CH3NH3PbI3-xClx solar cells by an effective Cl doping method

被引：216
|
作者：
Rao, Haixia [1 ]
Ye, Senyun [1 ]
Sun, Weihai [1 ]
Yan, Weibo [1 ]
Li, Yunlong [1 ]
Peng, Haitao [1 ]
Liu, Zhiwei [1 ]
Bian, Zuqiang [1 ]
Li, Yongfang [2 ]
Huang, Chunhui [1 ]
机构：
[1] Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
来源：
NANO ENERGY | 2016年 / 27卷
基金：
中国国家自然科学基金;
关键词：
Perovskite; Solar cells; CH3NH3PbI3-xClx; CuOx; Cl doping; Inorganic hole conductor; HOLE TRANSPORT MATERIALS; HALIDE PEROVSKITE; LOW-TEMPERATURE; PERFORMANCE; IODIDE; LAYER; FILM; RECOMBINATION; HYSTERESIS; CONDUCTOR;
D O I：
10.1016/j.nanoen.2016.06.044
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hybrid organic-inorganic perovskite solar cells (PSCs) have exhibited huge potential for commercial application due to their various advantages such as high performance, flexible and so on. The inorganic hole conductor-based inverted planar PSCs are particularly significant on account of low cost and high stability. Here, we have successfully improved the power conversion efficiency (PCE) of this type of PSCs to 19.0% with CuOx as hole conductor and hybrid CH3NH3PbI3-xClx perovskite as light absorber prepared by a novel Cl doping process based on a modified one-step fast deposition-crystallization method. This novel Cl doping process has proven to be a crucially effective procedure for enhancing the device performance due to the remarkable morphology and hole mobility improvement of the perovskite film, conspicuous intrinsic defects reduction in the film and prominent increase of the device recombination resistance. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：51 / 57
页数：7
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