Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

被引：63

作者：

Lee, YJ

Hsu, TC

Kuo, HC

Wang, SC

Yang, YL

Yen, SN

Chu, YT

Shen, YJ

Hsieh, MH

Jou, MJ

Lee, BJ

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 122卷 / 03期

关键词：

GaN; InGaN; patterned sapphire substrate (PSS);

D O I：

10.1016/j.mseb.2005.05.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the (1100)(sapphire) direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：184 / 187

页数：4

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