Properties of Ga1-xMnxAs with high x (>0.1)

被引：17

作者：

Chiba, D. ^{[1
,2
]}

Yu, K. M. ^{[3
]}

Walukiewicz, W. ^{[3
]}

Nishitani, Y. ^{[1
]}

Matsukura, F. ^{[1
,2
]}

Ohno, H. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Sendai, Miyagi 9800023, Japan

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Elect Mat Program, Berkeley, CA 94549 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2837469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetic and the crystalline properties of a set of Ga1-xMnxAs layers with high nominal Mn compositions (x=0.101-0.198). Magnetization measurements and combined channeling Rutherford backscattering (c-RBS) and particle induced x-ray emission (c-PIXE) measurements have been performed to determine the effective Mn composition x(eff) and the fraction of Mn atoms at various lattice sites. Here, x(eff) determined from magnetization measurements, which increases with increasing x, is consistent with the results determined from c-RBS-PIXE measurements. (c) 2008 American Institute of Physics.

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页数：3

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