Carbon-based resistive memories

被引：0

作者：

Koelmans, W. W. ^{[1
]}

Bachmann, T. ^{[2
]}

Zipoli, F. ^{[1
]}

Ott, A. K. ^{[3
]}

Dou, C. ^{[3
]}

Ferrari, A. C. ^{[3
]}

Cojocaru-Miredin, O. ^{[4
,5
]}

Zhang, S. ^{[5
]}

Scheu, C. ^{[5
]}

Wuttig, M. ^{[4
]}

Nagareddy, V. K. ^{[2
]}

Craciun, M. F. ^{[2
]}

Alexeev, A. M. ^{[2
]}

Wright, C. D. ^{[2
]}

Jonnalagadda, V. P. ^{[1
]}

Curioni, A. ^{[1
]}

Sebastian, A. ^{[1
]}

Eleftheriou, E. ^{[1
]}

机构：

[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[2] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England

[3] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[4] Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany

[5] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany

来源：

2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2016年

关键词：

Nonvolatile memory; oxygenated carbon; RRAM; tetrahedral amorphous carbon; diamond-like carbon; storage class memory; TETRAHEDRAL AMORPHOUS-CARBON;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.

引用

页数：4

共 50 条

[41] Carbon-Based Coatings in Medical Textiles Surface Functionalisation: An Overview
Antunes, Jose
Matos, Karim
Carvalho, Sandra
Cavaleiro, Albano
Cruz, Sandra M. A.
Ferreira, Fabio
PROCESSES, 2021, 9 (11)
[42] Carbon-based coatings for dry sheet-metal working
Taube, K
SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 976 - 984
[43] Overview on the Antimicrobial Activity and Biocompatibility of Sputtered Carbon-Based Coatings
Carvalho, Isabel
Rodrigues, Lisa
Lima, Maria Jose
Carvalho, Sandra
Cruz, Sandra M. A.
PROCESSES, 2021, 9 (08)
[44] Emerging memories: resistive switching mechanisms and current status
Jeong, Doo Seok
Thomas, Reji
Katiyar, R. S.
Scott, J. F.
Kohlstedt, H.
Petraru, A.
Hwang, Cheol Seong
REPORTS ON PROGRESS IN PHYSICS, 2012, 75 (07)
[45] Halide perovskites for resistive random-access memories
Kim, Hyojung
Han, Ji Su
Kim, Sun Gil
Kim, Soo Young
Jang, Ho Won
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (18) : 5226 - 5234
[46] Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Chen, Jui-Yuan
Hsin, Cheng-Lun
Huang, Chun-Wei
Chiu, Chung-Hua
Huang, Yu-Ting
Lin, Su-Jien
Wu, Wen-Wei
Chen, Lih-Juann
NANO LETTERS, 2013, 13 (08) : 3671 - 3677
[47] Comparison of three different architectures for active resistive memories
Mustafa, Jakob
Ruediger, Andreas
Waser, Rainer
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2007, 61 (05) : 345 - 352
[48] Testing Resistive Memories: Where Are We and What Is Missing?
Fieback, Moritz
Taouil, Mottaqiallah
Hamdioui, Said
2018 IEEE INTERNATIONAL TEST CONFERENCE (ITC), 2018,
[49] Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories
Aguilera-Pedregosa, Cristina
Maldonado, David
Gonzalez, Mireia B.
Moreno, Enrique
Jimenez-Molinos, Francisco
Campabadal, Francesca
Roldan, Juan B.
MICROMACHINES, 2023, 14 (03)
[50] A new technique to analyze RTN signals in resistive memories
Gonzalez-Cordero, G.
Gonzalez, M. B.
Campabadal, F.
Jimenez-Molinos, F.
Roldan, J. B.
MICROELECTRONIC ENGINEERING, 2019, 215

← 1 2 3 4 5 →