Carbon-based resistive memories

被引：0

作者：

Koelmans, W. W. ^{[1
]}

Bachmann, T. ^{[2
]}

Zipoli, F. ^{[1
]}

Ott, A. K. ^{[3
]}

Dou, C. ^{[3
]}

Ferrari, A. C. ^{[3
]}

Cojocaru-Miredin, O. ^{[4
,5
]}

Zhang, S. ^{[5
]}

Scheu, C. ^{[5
]}

Wuttig, M. ^{[4
]}

Nagareddy, V. K. ^{[2
]}

Craciun, M. F. ^{[2
]}

Alexeev, A. M. ^{[2
]}

Wright, C. D. ^{[2
]}

Jonnalagadda, V. P. ^{[1
]}

Curioni, A. ^{[1
]}

Sebastian, A. ^{[1
]}

Eleftheriou, E. ^{[1
]}

机构：

[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[2] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England

[3] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[4] Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany

[5] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany

来源：

2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2016年

关键词：

Nonvolatile memory; oxygenated carbon; RRAM; tetrahedral amorphous carbon; diamond-like carbon; storage class memory; TETRAHEDRAL AMORPHOUS-CARBON;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.

引用

页数：4

共 50 条

[31] Perovskite Oxides as Resistive Switching Memories: A Review
Panda, Debashis
Tseng, Tseung-Yuen
FERROELECTRICS, 2014, 471 (01) : 23 - 64
[32] Mechanical and Tribological Properties of Carbon-Based Graded Coatings
Kot, M.
Major, L.
Lackner, J. M.
Chronowska-Przywara, K.
Janusz, M.
Rakowski, W.
JOURNAL OF NANOMATERIALS, 2016, 2016
[33] Carbon-based composite thin films for use as microelectrode
Lee, HL
Ting, JM
MATERIALS CHEMISTRY AND PHYSICS, 2003, 82 (03) : 567 - 570
[34] Discovery of carbon-based strongest and hardest amorphous material
Zhang, Shuangshuang
Li, Zihe
Luo, Kun
He, Julong
Gao, Yufei
Soldatov, Alexander, V
Benavides, Vicente
Shi, Kaiyuan
Nie, Anmin
Zhang, Bin
Hu, Wentao
Ma, Mengdong
Liu, Yong
Wen, Bin
Gao, Guoying
Liu, Bing
Zhang, Yang
Shu, Yu
Yu, Dongli
Zhou, Xiang-Feng
Zhao, Zhisheng
Xu, Bo
Su, Lei
Yang, Guoqiang
Chernogorova, Olga P.
Tian, Yongjun
NATIONAL SCIENCE REVIEW, 2022, 9 (01)
[35] Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes
Ohta, Akio
Fukusima, Motoki
Makihara, Katsunori
Murakami, Hideki
Higashi, Seiichiro
Miyazaki, Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
[36] TiO2-Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories
Zhang, Xijian
Jin, Jidong
Kim, Jaekyun
Balocco, Claudio
Zhang, Jiawei
Song, Aimin
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (12):
[37] Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
Zhao, Weisheng
Moreau, Mathieu
Deng, Erya
Zhang, Yue
Portal, Jean-Michel
Klein, Jacques-Olivier
Bocquet, Marc
Aziza, Hassen
Deleruyelle, Damien
Muller, Christophe
Querlioz, Damien
Ben Romdhane, Nesrine
Ravelosona, Dafine
Chappert, Claude
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (02) : 443 - 454
[38] Neural network based analysis of random telegraph noise in resistive random access memories
Gonzalez-Cordero, G.
Gonzalez, M. B.
Morell, A.
Jimenez-Molinos, F.
Campabadal, F.
Roldan, J. B.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (02)
[39] Deterministic Formation of Conductive Filaments in Resistive Memories With Cavities Formed by Nanosphere Templates
Kadyrov, Arman
Hyun, Gihwan
Choi, Yongsu
Devnath, Anupom
Patil, Shubham
Lee, Seunghyun
Bae, Junseong
IEEE ELECTRON DEVICE LETTERS, 2024, 45 (08) : 1461 - 1463
[40] Antibiofilm Activities of Carbon-Based Nanoparticles and Nanocomposites: A Comparative Review
Mukherjee, Dipro
Sil, Moumita
Goswami, Arunava
Lahiri, Dibyajit
Nag, Moupriya
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS, 2023, 33 (12) : 3961 - 3983

← 1 2 3 4 5 →