Carbon-based resistive memories

被引：0

作者：

Koelmans, W. W. ^{[1
]}

Bachmann, T. ^{[2
]}

Zipoli, F. ^{[1
]}

Ott, A. K. ^{[3
]}

Dou, C. ^{[3
]}

Ferrari, A. C. ^{[3
]}

Cojocaru-Miredin, O. ^{[4
,5
]}

Zhang, S. ^{[5
]}

Scheu, C. ^{[5
]}

Wuttig, M. ^{[4
]}

Nagareddy, V. K. ^{[2
]}

Craciun, M. F. ^{[2
]}

Alexeev, A. M. ^{[2
]}

Wright, C. D. ^{[2
]}

Jonnalagadda, V. P. ^{[1
]}

Curioni, A. ^{[1
]}

Sebastian, A. ^{[1
]}

Eleftheriou, E. ^{[1
]}

机构：

[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

[2] Univ Exeter, Coll Engn Math & Phys Sci, Exeter EX4 4QF, Devon, England

[3] Univ Cambridge, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[4] Rhein Westfal TH Aachen, Inst Phys IA, D-52056 Aachen, Germany

[5] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany

来源：

2016 IEEE 8TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2016年

关键词：

Nonvolatile memory; oxygenated carbon; RRAM; tetrahedral amorphous carbon; diamond-like carbon; storage class memory; TETRAHEDRAL AMORPHOUS-CARBON;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.

引用

页数：4

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