InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

被引：30
作者：
Jhang, Yuan-Hsuan [1 ,2 ]
Tanabe, Katsuaki [1 ,2 ]
Iwamoto, Satoshi [1 ,2 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 08期
基金：
日本学术振兴会;
关键词：
Wafer bonding; semiconductor quantum dot laser; photonic integrated circuits; silicon photonics; GAAS; DEPENDENCE;
D O I：
10.1109/LPT.2015.2398465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Perot lasers operate with a threshold current density of 520 A . cm(-2) for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 mu m at room temperature.
引用
收藏
页码：875 / 878
页数：4
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