InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

被引：30

作者：

Jhang, Yuan-Hsuan ^{[1
,2
]}

Tanabe, Katsuaki ^{[1
,2
]}

Iwamoto, Satoshi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1138654, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 08期

基金：

日本学术振兴会;

关键词：

Wafer bonding; semiconductor quantum dot laser; photonic integrated circuits; silicon photonics; GAAS; DEPENDENCE;

D O I：

10.1109/LPT.2015.2398465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Perot lasers operate with a threshold current density of 520 A . cm(-2) for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 mu m at room temperature.

引用

页码：875 / 878

页数：4

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