InP/InGaAs pin photodiode structure maximising bandwidth and efficiency

被引：88

作者：

Muramoto, Y

Ishibashi, T

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

[2] NTT Elect Corp, Tokyo 1940004, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 24期

关键词：

D O I：

10.1049/el:20031116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new photodiode design that combines depleted and neutral absorption layers to minimise carrier travelling delay time for a given total absorption layer thickness is proposed. The fabricated photodiode has a thick (0.8 pm) InGaAs absorption layer and achieves a responsivity of 0.98 A/W at lambda = 1.55 mum while still maintaining a high bandwidth of 50 GHz.

引用

页码：1749 / 1750

页数：2

共 4 条

[1] Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage [J].