A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

被引：20

作者：

Kim, Youngmin ^{[1
]}

Koh, Yumin ^{[2
]}

Kim, Jihoon ^{[1
]}

Lee, Seokchul ^{[3
]}

Jeong, Jinho ^{[4
]}

Seo, Kwangseok ^{[2
]}

Kwon, Youngwoo ^{[1
]}

机构：

[1] Seoul Natl Univ, Inst New Media & Commun, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[3] Seoul Natl Univ, Dept Elect Engn, Seoul 151742, South Korea

[4] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 06期

关键词：

Metamorphic high electron mobility transistor (mHEMT); power amplifier (PA); FET; V-band;

D O I：

10.1109/LMWC.2011.2140096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A V-band monolithic microwave integrated circuit power amplifier (PA) using metamorphic high electron mobility transistors (mHEMTs) is developed using a stacked-FET structure. Design methodology to optimize the series power combining power amplifiers at millimeter-waves is also presented. The fabricated PA using triple-stacked 130 nm mHEMTs shows a gain of 16 dB and a saturated output power of 20 dBm with a power added efficiency of 19% at 59 GHz. The 3 dB output power bandwidth is as wide as 15 GHz.

引用

页码：323 / 325

页数：3

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