Material damage induced by nanofabrication processes in manganite thin films

被引：17

作者：

Balcells, L. I. ^{[1
]}

Abad, L. I. ^{[1
]}

Rojas, H. ^{[2
]}

Martinez, B. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain

[2] Cent Univ Venezuela, Fac Ciencias, Escuela Fis, Caracas 1020A, Venezuela

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 13期

关键词：

D O I：

10.1088/0957-4484/19/13/135307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the use of the focused ion-beam ( FIB) technique as a nanofabrication tool for the implementation of oxide-based magnetic and magnetoelectronic functional devices. In particular, we studied the effect of using FIB lithography for the patterning of La(2/3)Ca(1/3)MnO(3) magnetic oxide thin films. Results obtained show that the transport properties of patterned areas were strongly degraded after the patterning process. In contrast, no degradation was detected when the patterning was performed using a less aggressive technique. The origin of this degradation correlates with Ga(+) ion implantation, as indicated by Auger spectroscopy analysis of the patterned films.

引用

页数：5

共 28 条

[1] Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films -: art. no. 212502 [J].

Abad, L ;

Martínez, B ;

Balcells, LI .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[2] Interfacial strain:: The driving force for selective orbital occupancy in manganite thin films [J].

Abad, Llibertat ;

Laukhin, Vladimir ;

Valencia, Sergio ;

Gaup, Andreas ;

Gudat, Wolfgan ;

Balcells, Lluis ;

Martinez, Benjamin .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (18) :3918-3925

[3] Electronic effects in manganite/insulator interfaces:: Interfacial enhancement of the insulating tunneling barriers [J].

Balcells, Lluas ;

Abad, Llibertat ;

Rojas, Humberto ;

del Pino, Angel Perez ;

Estrade, Sonia ;

Arbiol, Jordi ;

Peiro, Francisca ;

Martinez, Benjamin .

SMALL, 2008, 4 (03) :365-371

[4] Growth and characterization of TiO2 as a barrier for spin-polarized tunneling [J].

Bibes, M ;

Bowen, M ;

Barthélémy, A ;

Anane, A ;

Bouzehouane, K ;

Carrétéro, C ;

Jacquet, E ;

Contour, JP ;

Durand, O .

APPLIED PHYSICS LETTERS, 2003, 82 (19) :3269-3271

[5]

Brambley D., 1994, Advanced Materials for Optics and Electronics, V4, P55, DOI 10.1002/amo.860040203

[6] Magnetoresistance and electrical hysteresis in stable half-metallic La0.7Sr0.3MnO3 and Fe3O4 nanoconstrictions -: art. no. 083102 [J].

Céspedes, O ;

Watts, SM ;

Coey, JMD ;

Dörr, K ;

Ziese, M .

APPLIED PHYSICS LETTERS, 2005, 87 (08)

[7] Colossal magnetoresistant materials: The key role of phase separation [J].

Dagotto, E ;

Hotta, T ;

Moreo, A .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2001, 344 (1-3) :1-153

[8] Lateral damage extension during masked ion implantation into GaAs [J].

Faye, MM ;

Vieu, C ;

BenAssayag, G ;

Salles, P ;

Claverie, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) :4303-4307

[9] Exploration of the ultimate patterning potential achievable with focused ion beams [J].

Gierak, J ;

Bourhis, E ;

Combes, MNM ;

Chriqui, Y ;

Sagnes, I ;

Mailly, D ;

Hawkes, P ;

Jede, R ;

Bruchhaus, L ;

Bardotti, L ;

Prével, B ;

Hannour, A ;

Mélinon, P ;

Perez, A ;

Ferré, J ;

Jamet, JP ;

Mougin, A ;

Chappert, C ;

Mathet, V .

MICROELECTRONIC ENGINEERING, 2005, 78-79 :266-278

[10] Nano-fabrication with focused ion beams [J].

Gierak, J ;

Mailly, D ;

Faini, G ;

Pelouard, JL ;

Denk, P ;

Pardo, F ;

Marzin, JY ;

Septier, A ;

Schmid, G ;

Ferré, J ;

Hydman, R ;

Chappert, C ;

Flicstein, J ;

Gayral, B ;

Gérard, JM .

MICROELECTRONIC ENGINEERING, 2001, 57-8 :865-875

← 1 2 3 →