Impact of laser scribing for efficient device separation of LED components

被引：22

作者：

Illy, EK

Knowles, M

Gu, E

Dawson, MD

机构：

[1] Oxford Lasers Ltd, Didcot OX17 7HP, Oxon, England

[2] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

来源：

APPLIED SURFACE SCIENCE | 2005年 / 249卷 / 1-4期

关键词：

laser scribing; sapphire scribing; laser dicing; UV wavelengths; LEDs;

D O I：

10.1016/j.apsusc.2004.12.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Laser scribing of light emitting diode (LED) components on sapphire substrates is shown in this paper to be a viable method of device separation. Three key measurements revealing the effects of UV laser scribing on the LED component performance are discussed and compared for laser scribing at 255 and 355 nm. The differences in these two UV wavelengths are further discussed in terms of quality; comparing pulse energies and pulse repetition frequencies for UV ablation of sapphire. In general, these results prove laser processing can be used as an effective high volume manufacturing procedure for substrate separation. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：354 / 361

页数：8

共 5 条

[1] Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser [J].