Thermoelectric Properties of Sb-Doped Ga2Te3 Alloy

被引：0

作者：

Fu Hong ^{[1
]}

Ying Pengzhan

Cui Jiaolin ^{[1
]}

Yan Yanming ^{[1
]}

Zhang Xiaojun ^{[1
]}

机构：

[1] Ningbo Univ Technol, Ningbo 315016, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2011年 / 40卷 / 05期

关键词：

Ga1.9Sb0.1Te3; microstructure; thermoelectric properties; GALLIUM;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb element was substituted for Ga in the Ga2Te3 alloy with the same molar fraction and Ga(1.9)Sb(0.1)ATe(3) alloy was prepared by spark plasma sintering. The microstructure and the thermoelectric (TE) property of the alloy were investigated. Results show that after Se doping the Seebeck coefficient of the sample is about 130-240 mu V/K, much lower than that of single crystal Ga2Te3, and the electrical conductivity decreases from 3600 to 1740 Omega(-1).m(-1) with temperature elevation to 649 K, being at least 16 times higher than that of single crystal Ga2Te3 at the corresponding temperature. The thermal conductivity increases by about 25% after Sb doping. The maximum TE figure of merit (ZT) value of 0.1 is obtained at 649 K, which is approximately 3 times as large as that of single crystal Ga2Te3 at the corresponding temperature.

引用

页码：849 / 852

页数：4

共 11 条

[1] GALLIUM-TELLURIUM SYSTEM - PHASE-DIAGRAMS, STRUCTURAL STUDY ON GATE, GA2TE5 AND GA6SNTE10 [J].