Theory of the Junctionless Nanowire FET

被引：189
作者：
Gnani, Elena [1 ,2 ]
Gnudi, Antonio [1 ,2 ]
Reggiani, Susanna [1 ,2 ]
Baccarani, Giorgio [1 ,2 ]
机构：
[1] Univ Bologna, E De Castro Adv Res Ctr Elect Syst ARCES, I-40125 Bologna, Italy
[2] Univ Bologna, Dept Elect Comp Sci & Syst, I-40136 Bologna, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期
关键词：
Depletion-mode field-effect transistor (FET); junctionless field-effect transistor (JL-FET); nanowire field-effect transistor (NW-FET); subthreshold slope (SS); DOUBLE-GATE; MODEL; TRANSPORT; TRANSISTORS;
D O I：
10.1109/TED.2011.2159608
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we model the electrical properties of the junctionless (JL) nanowire field-effect transistor (FET), which has been recently proposed as a possible alternative to the junction-based FET. The analytical model worked out here assumes a cylindrical geometry and is meant to provide a physical understanding of the device behavior. Most notably, it aims to clarify the motivation for its nearly ideal subthreshold slope and its excellent ON-state current while being a depletion device with lower electron mobility due to impurity scattering. At the same time, the model clarifies a constraint binding the allowable value of the doping density per unit length and its impact on the overall device performance. The device variability and the parasitic source/drain resistances are identified as the most important limitations of the JL nanowire field-effect transistor.
引用
收藏
页码：2903 / 2910
页数：8
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