Total dose effects on power-MOSFET switching converters

被引：17
|
作者：
Pizano, JE [1 ]
Ma, TH
Attia, JO
Schrimpf, RD
Galloway, KF
Witulski, AF
机构：
[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA
[2] Prairie View A&M Univ, Dept Elect Engn, Prairie View, TX 77446 USA
[3] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
来源：
MICROELECTRONICS RELIABILITY | 1998年 / 38卷 / 12期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1016/S0026-2714(98)00154-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Power MOSFETs have important applications in space systems; particularly in dc/dc power conversion. Transistors used in the space environment are subject to the effects of exposure to the natural radiation environment in space. Among the effects of ionizing radiation are shifts in threshold voltage and reduction of carrier mobility. In this work, the total-ionizing-dose-induced degradation of two switching power converters is examined. The MOSFETs for two switching converters were irradiated with a Co-60 source and their performance was evaluated in buck and boost converters. The experimental results agree well with values obtained from SPICE simulations. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1935 / 1939
页数：5
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