A Novel Sensing Scheme for Reliable Read Operation of Ultrathin-Body Vertical NAND Flash Memory Devices

被引：2
|
作者：
Cho, Seongjae [1 ]
Park, Byung-Gook [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 08期
关键词：
Double sensing per 2 bits (DSTB); electrical interference; multilevel cell (MLC); NAND Flash memory device; ultrathin body; CELL;
D O I：
10.1109/TED.2011.2157508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this brief, an advanced sensing scheme for ultrathin-body vertical Flash memory device is introduced experimentally. Without an increment in the number of read operations, the program/erase states of a memory cell can be identified exactly even with the existence of electrical interference between cells having an ultrathin vertical channel in common. The novel sensing scheme, i.e., the double sensing per 2 bits method, was validated for a fabricated device with a channel thickness of 80 nm. The proposed method can be also used as reference for establishing a smart sensing scheme for multilevel cell NAND Flash memory devices.
引用
收藏
页码：2814 / 2817
页数：4
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