Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

被引：26
|
作者：
Chen, T. [1 ]
Koehler, F. [1 ]
Heidt, A. [1 ]
Huang, Y. [1 ]
Finger, F. [1 ]
Carius, R. [1 ]
机构：
[1] Forschungszentrum Julich, IEK Photovolta 5, D-52425 Julich, Germany
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 14期
关键词：
Microcrystalline; Silicon carbide; Microstructure; Thin film; Hot-Wire CVD; LOW-TEMPERATURE DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; LOW SUBSTRATE-TEMPERATURE; RAMAN-SCATTERING; SOLAR-CELLS; SIC POLYTYPES; WINDOW LAYERS; N-TYPE; HWCVD; RELAXATION;
D O I：
10.1016/j.tsf.2011.01.336
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An overview on microstructural and electronic properties of stoichiometric microcrystalline silicon carbide (mu c-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low substrate temperatures will be given. The electronic properties are strongly dependent on crystalline phase, local bonding, strain, defects, impurities, etc. Therefore these quantities need to be carefully investigated in order to evaluate their influence and to develop strategies for material improvement. We will particularly address the validity of different experimental methods like Raman spectroscopy and IR spectroscopy to provide information on the crystalline volume fraction by comparing the results with Transmission Electron Microscopy (TEM) and X-Ray diffraction data. Finally the electronic properties as derived from optical absorption and transport measurements will be related to the microstructure. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：4511 / 4515
页数：5
相关论文
共 50 条
  • [1] Microcrystalline silicon prepared with hot-wire CVD
    F. Finger
    S. Klein
    R. Carius
    T. Dylla
    O. Vetterl
    A. L. Baia Neto
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 621 - 624
  • [2] Microcrystalline silicon prepared with hot-wire CVD
    Finger, F
    Klein, S
    Carius, R
    Dylla, T
    Vetterl, O
    Neto, ALB
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 621 - 624
  • [3] Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
    Klein, Stefan
    Dasgupta, Arup
    Finger, Friedhelm
    Carius, Reinhard
    Bronger, Torsten
    THIN SOLID FILMS, 2008, 516 (05) : 630 - 632
  • [4] A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method
    Yoshida, Norimitsu
    Terazawa, Sho
    Hayashi, Kotaro
    Hamaguchi, Tomonari
    Natsuhara, Hironori
    Nonomura, Shuichi
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 1987 - 1989
  • [5] Microcrystalline silicon thin film solar cells with microcrystalline silicon carbide window layers and silicon absorber layers both prepared by Hot-Wire CVD
    Chen, Tao
    Huang, Yuelong
    Yang, Deren
    Carius, Reinhard
    Finger, Friedhelm
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (3-4): : 61 - 63
  • [6] Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties
    Chen, Tao
    Yang, Deren
    Carius, Reinhard
    Finger, Friedhelm
    THIN SOLID FILMS, 2011, 519 (14) : 4516 - 4518
  • [7] Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition
    Brüggemann, R
    Kleider, JP
    Longeaud, C
    Mencaraglia, D
    Guillet, J
    Bourée, JE
    Niikura, C
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 258 - 262
  • [8] Development of microcrystalline silicon carbide window layers by hot-wire CVD and their applications in microcrystalline silicon thin film solar cells
    Chen, Tao
    Huang, Yuelong
    Yang, Deren
    Carius, Reinhard
    Finger, Friedhelm
    THIN SOLID FILMS, 2011, 519 (14) : 4523 - 4526
  • [9] Microcrystalline silicon thin film transistors obtained by hot-wire CVD
    Puigdollers, J
    Dosev, D
    Orpella, A
    Vox, C
    Peiro, D
    Bertomeu, J
    Marsal, LF
    Pallares, J
    Andreu, J
    Alcubilla, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 526 - 529
  • [10] Electronic properties and device applications of hot-wire CVD polycrystalline silicon films
    Middya, AR
    Guillet, J
    Brenot, R
    Perrin, J
    Bouree, JE
    Longeaud, C
    Kleider, JP
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 271 - 282
12345