Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering

被引：42

作者：

Angleraud, B ^{[1
]}

Mubumbila, N ^{[1
]}

Tessier, PY ^{[1
]}

Fernandez, V ^{[1
]}

Turban, G ^{[1
]}

机构：

[1] Univ Nantes, Lab Plasmas & Couches Minces, Inst Mat Jean Rouxel, CNRS,UMR 6502, F-44332 Nantes 3, France

来源：

DIAMOND AND RELATED MATERIALS | 2001年 / 10卷 / 3-7期

关键词：

bonding; nitrides; sputtering; deposition;

D O I：

10.1016/S0925-9635(00)00384-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work is devoted to the study of the reactive plasma beam sputtering deposition of carbon nitride thin films. To investigate the variations of the bonding structure, induced by modifying the main deposition parameters, a systematic characterization of the films by X-ray photoelectron spectroscopy (XPS) is performed. With increasing the nitrogen partial pressure, the deposition rate and the nitrogen atomic fraction in the films increase, and the valence band spectrum shape is modified. The curve fitting of the Cls and N1s peak spectra shows that C and N atoms exhibit several chemical states, representative of different type of chemical bonds. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：1142 / 1146

页数：5

相关论文

共 13 条

[1] XPS spectra of thin CNx films prepared by chemical vapor deposition [J].

Beshkov, G ;

Dimitrov, DB ;

Georgiev, S ;

Juan-Cheng, D ;

Petrov, P ;

Velchev, N ;

Krastev, V .

DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) :591-594

[2] Effects of heat treatment on the field emission property of amorphous carbon nitride. [J].

Chi, EJ ;

Shim, JY ;

Choi, DJ ;

Baik, HK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1219-1221

[3] Evidence for continuous areas of crystalline β-C3N4 in sputter-deposited thin films [J].

Chowdhury, AKMS ;

Cameron, DC ;

Hashmi, MSJ ;

Gregg, JM .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (06) :2359-2363

[4] Growth mechanism and cross-sectional structure of tetrahedral amorphous carbon thin films [J].

Davis, CA ;

Amaratunga, GAJ ;

Knowles, KM .

PHYSICAL REVIEW LETTERS, 1998, 80 (15) :3280-3283

[5] Separation of the sp(3) and sp(2) components in the C1s photoemission spectra of amorphous carbon films [J].

Diaz, J ;

Paolicelli, G ;

Ferrer, S ;

Comin, F .

PHYSICAL REVIEW B, 1996, 54 (11) :8064-8069

[6] Comparison of infrared, Raman, photoluminescence, and X-ray photoelectron spectroscopy for characterizing arc-jet-deposited diamond films [J].

Haque, MS ;

Naseem, HA ;

Shultz, JL ;

Brown, WD ;

Lal, S ;

Gangopadhyay, S .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (08) :4421-4429

[7] The effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition [J].

Lee, DY ;

Kim, YH ;

Kim, IK ;

Baik, HK .

THIN SOLID FILMS, 1999, 355 :239-245

[8] STRUCTURAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF LOW-COMPRESSIBILITY MATERIALS - BETA-SI3N4 AND HYPOTHETICAL BETA-C3N4 [J].

LIU, AY ;

COHEN, ML .

PHYSICAL REVIEW B, 1990, 41 (15) :10727-10734

[9] Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy [J].

Souto, S ;

Pickholz, M ;

dos Santos, MC ;

Alvarez, F .

PHYSICAL REVIEW B, 1998, 57 (04) :2536-2540

[10] Carbon nitride thin films deposited by reactive plasma beam sputtering [J].

Tessier, PY ;

N'guessan, RK ;

Angleraud, B ;

Fernandez, V ;

Mubumbila, N ;

Turban, G .

SURFACE & COATINGS TECHNOLOGY, 2000, 125 (1-3) :295-300