RF technique for determining ambipolar carrier lifetime in pin RF switching diodes

被引：16
|
作者：
Caverly, RH [1 ]
机构：
[1] Villanova Univ, Dept Elect & Comp Engn, Villanova, PA 19085 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 23期
关键词：
D O I：
10.1049/el:19981568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method is presented for determining the carrier lifetime in silicon or gallium arsenide pin RF switching diodes using microwave and RF measurements. Swept frequency measurements are used to determine the reactance minimum of the pin diode. This frequency of the pin diode reactance minimum is shown to be inversely proportional to the I-region carrier lifetime. The procedure can be performed at high or low bias levels on any pin diode technology.
引用
收藏
页码：2277 / 2278
页数：2
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