RF technique for determining ambipolar carrier lifetime in pin RF switching diodes

A new method is presented for determining the carrier lifetime in silicon or gallium arsenide pin RF switching diodes using microwave and RF measurements. Swept frequency measurements are used to determine the reactance minimum of the pin diode. This frequency of the pin diode reactance minimum is shown to be inversely proportional to the I-region carrier lifetime. The procedure can be performed at high or low bias levels on any pin diode technology.