Random telegraph noise in GaN-based light-emitting diodes

被引：4

作者：

Kang, T. ^{[1
,2
]}

Park, J. ^{[1
,2
]}

Lee, J. -K. ^{[1
,2
]}

Kim, G. ^{[1
,2
]}

Woo, D. ^{[1
,2
]}

Son, J. K. ^{[1
,2
]}

Lee, J. -H. ^{[1
,2
]}

Park, B. -G. ^{[1
,2
]}

Shin, H. ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, ISRC, Sch Nanosci & Technol, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 15期

关键词：

LOW-FREQUENCY NOISE;

D O I：

10.1049/el.2011.1439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random telegraph noise (RTN) having two discrete current levels was characterised in reverse current of GaN based light-emitting diodes. Through compared magnitude of the hysteresis with RTN amplitude in reverse current, it is confirmed that RTN causes the current-voltage (I-V) hysteresis. The mechanism of RTN was analysed by using a tunnelling equation. In addition, activation energy of the trap leading to RTN was characterised by analysis of the time constants with voltage and temperature.

引用

页码：873 / U1962

页数：2

共 9 条

[1] Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes [J].

Bychikhin, S ;

Pogany, D ;

Vandamme, LKJ ;

Meneghesso, G ;

Zanoni, E .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)

[2]

CHO J, 2010, ELECT LETT, V46

[3] A new insight into the dynamic fluctuation mechanism of stress-induced leakage current [J].

Ishida, T. ;

Tega, N. ;

Mori, Y. ;

Miki, H. ;

Mine, T. ;

Kume, H. ;

Torii, K. ;

Muraguchi, M. ;

Takada, Y. ;

Shiraishi, K. ;

Yamada, R. .

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :604-+

[4] NOISE IN SOLID-STATE MICROSTRUCTURES - A NEW PERSPECTIVE ON INDIVIDUAL DEFECTS, INTERFACE STATES AND LOW-FREQUENCY (1/F) NOISE [J].

KIRTON, MJ ;

UREN, MJ .

ADVANCES IN PHYSICS, 1989, 38 (04) :367-468

[5] Accurate extraction of the trap depth from RTS noise data by including poly depletion effect and surface potential variation in MOSFETs [J].

Lee, Hochul ;

Yoon, Youngchang ;

Cho, Seongjae ;

Shin, Hyungcheol .

IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (05) :968-972

[6]

Lee Jeong-Hyun., 2006, JSTS: Journal of Semiconductor Technology and Science, V6, P38, DOI [DOI 10.1016/S0167-9317(00)00299-9, 10.1016/S0167-9317(00)00299-9]

[7] Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-k nFETs [J].