Optimization of CuO/CdTe/CdS/TiO2 solar cell efficiency: A numerical simulation modeling

被引:10
|
作者
Roy, Avishek [1 ]
Majumdar, Abhijit [2 ]
机构
[1] Vidyasagar Coll, Dept Elect, 39 Sankar Ghosh Lane, Kolkata 700006, India
[2] Indian Inst Engn Sci & Technol, Dept Phys, Sibpur 711103, India
来源
OPTIK | 2022年 / 251卷
关键词
Multi-junction solar cell; SCAPS simulator; Hole transporting layer; Carrier density; Photovoltaic characteristics; Cell efficiency; TRANSPORT LAYER; PERFORMANCE; THICKNESS; DYE;
D O I
10.1016/j.ijleo.2021.168456
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
CdTe/CdS heterojunction solar cells have gained significant attention as commercial photovoltaic devices recently. In this study, numerical simulation is performed on CuO/CdTe/CdS/TiO2 multi-junction solar cell using CuO as a hole transporting layer (HTL) and TiO2 as a transparent con-ducting oxide (TCO) layer. The photovoltaic parameters of the proposed cell are optimized by employing solar cell capacitance simulator (SCAPS)-1D. A guideline for optimizing the highest efficiency (eta = 23.59%), open circuit voltage (V-OC = 0.949 V), short circuit current density (J(SC) = 28.48 mA/cm(2)) and fill factor (FF = 87.27%) is explored by modifying the thickness of HTL, TCO and the absorber layer. The efficiency has been optimized on account of the acceptor/donor density (1 x 10(18) cm(-3)) of the HTL/TCO material. The power conversion efficiency of the cell is also optimized at the outcome of neutral, acceptor and donor defect concentration (1 x 10(14) cm(-3)) of the absorber and an efficiency of 24.48% can be achieved at an operating temperature of 285 K. Pt is the most suitable back contact metal from others which can further increase the efficiency to 28.11%. This simulation approach will be useful for the synthesis and development of new CdTe/CdS thin film solar cells.
引用
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页数:12
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