Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study

被引：10

作者：

Wu, K. ^{[1
,2
]}

Zhao, M. ^{[1
,3
]}

Yang, T. ^{[1
,2
]}

da Costa, Joao Guimaraes ^{[1
]}

Liang, Z. ^{[1
,3
]}

Shi, X. ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China

来源：

JOURNAL OF INSTRUMENTATION | 2020年 / 15卷 / 03期

关键词：

Solid state detectors; Timing detectors; Charge transport and multiplication in solid media; Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; G-APDs; CCDs; EBCCDs; EMCCDs; CMOS imagers; etc); TECHNOLOGY;

D O I：

10.1088/1748-0221/15/03/C03008

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Low Gain Avalanche Detectors (LGAD) are silicon sensors with a time resolution better than 20 ps. The ATLAS and CMS experiments are designing LGAD detectors to address the pile-up challenge at the High Luminosity-Large Hadron Collider (HL-LHC). The Institute of High Energy Physics (IHEP) High-Granularity Timing Detector group has recently developed its first version of LGAD sensors. The LGAD structure was designed using Technology Computer-Aided Design (TCAD) simulations and optimized to obtain a high breakdown voltage and ideal gain. The n-type Junction Termination Extension (N-JTE) zone is a critical structure to guarantee a high breakdown voltage. The gain layer is optimized for an ideal gain factor and hence good time resolution. The optimized LGAD sensor has a gain higher than six and a breakdown voltage higher than 400V.

引用

页数：13

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