Chemical synthesis and crystal growth of AgGaGeS4, a material for mid-IR nonlinear laser applications

被引：1

作者：

Rame, J. ^{[1
]}

Petit, J. ^{[1
]}

Clement, Q. ^{[1
]}

Melkonian, J. M. ^{[1
]}

Viana, B. ^{[2
]}

机构：

[1] Off Natl Etud & Rech Aerosp, F-92322 Chatillon, France

[2] IRCP Chim ParisTech, F-75231 Paris 05, France

来源：

NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS, DEVICES, AND APPLICATIONS XIV | 2015年 / 9347卷

关键词：

Non linear materials; AgGaGeS4; Crystal growth; Optical Characterization; LOW QUANTUM-DEFECT; SINGLE-CRYSTALS; AGGAS2-GES2;

D O I：

10.1117/12.2075582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AgGaGeS4 compound (AGGS) is a promising nonlinear material for mid-IR applications. The different steps of this materials processing are presented. The chemical synthesis of polycrystals and the single crystal growth process are described. Compounds volatility can induce stoichiometry deviation and reduce the quality of obtained single crystals. Nevertheless, 28 mm diameter and 70 mm length single crystals have been grown by Bridgman-Stockbarger method, cut and polished AGGS crystal is obtained. The crystal has good homogeneity and absorption coefficient of less than 0.1 cm(-1) in the 0.5-11.5 mu m range which make it usable in nonlinear devices.

引用

页数：6

共 12 条

[1] Spectroscopic properties and laser performances of Yb:YCOB and potential of the Yb:LaCOB material [J].