GaAs quantum dot solar cell under concentrated radiation

被引：8

作者：

Sablon, K. ^{[1
]}

Li, Y. ^{[2
]}

Vagidov, N. ^{[2
,3
]}

Mitin, V. ^{[2
]}

Little, J. W. ^{[1
]}

Hier, H. ^{[1
]}

Sergeev, A. ^{[1
,2
]}

机构：

[1] US Army Res Lab, Adelphi, MD 20783 USA

[2] SUNY Buffalo, EE Dept, Buffalo, NY 14260 USA

[3] US Air Force Res Lab, Albuquerque, NM 87117 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 07期

基金：

美国国家科学基金会;

关键词：

EFFICIENCY; SUNS;

D O I：

10.1063/1.4928669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%-19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1-1.3 found from the VOC-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40-90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at similar to 40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 30 条

[1] A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns [J].