Layer-dependent band to band tunneling in WSe2/ReS2van der Waals heterojunction

被引：3

作者：

Ou, Yang ^{[1
,2
]}

Liu, Baishan ^{[1
,2
]}

Kang, Zhuo ^{[1
,2
]}

Liao, Qingliang ^{[1
,2
]}

Zhang, Zheng ^{[1
,2
]}

Zhang, Yue ^{[1
,2
]}

机构：

[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing Key Lab Adv Energy Mat & Technol, Beijing 100083, Peoples R China

[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 37期

基金：

中国国家自然科学基金;

关键词：

van der Waals heterojunction; tunneling field-effect transistors; band to band tunneling; direct-indirect band gap transition; TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; HETEROSTRUCTURES; GRAPHENE; MOS2; TRANSISTORS; MONOLAYER; GROWTH;

D O I：

10.1088/1361-6463/ab8f52

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Van der Waals (vdW) heterostructures are promising for building tunneling field-effect transistors (TFETs), owing to an inherent narrow vdW gap between two stacked materials induced by the dangling bond free surface. However, the band to band tunneling (BTBT) of such a vdW heterostructure TFET strongly depends on the layer-dependent band structure variation at the interface. Here, we report a first principle simulation on the BTBT transition of the monolayer ReS(2)based heterostructures with monolayer and bilayer WSe2. An obvious decrease of the turn-on gate voltage from 36 V to 12 V was achieved by adding a layer of WSe(2)due to the band gap narrowing and momentum conservative Gamma-Gamma tunneling. Under the gate voltage of 20 V with bias of 0.271 V, the upper limit of the BTBT saturate current density in bilayer WSe(2)vdW heterojunction can reach 934 mu A mu m(-1). These results show the bilayer WSe(2)heterojunction could be an ideal candidate for lower power and high operating speed TFETs.

引用

页数：8