An Efficient Nonlocal Hot Electron Model Accounting for Electron-Electron Scattering

被引：5

作者：

Zaka, Alban ^{[1
,2
,3
]}

Palestri, Pierpaolo ^{[3
]}

Rafhay, Quentin ^{[4
]}

Clerc, Raphael ^{[4
]}

Iellina, Matteo ^{[3
]}

Rideau, Denis ^{[1
]}

Tavernier, Clement ^{[1
]}

Pananakakis, Georges ^{[4
]}

Jaouen, Herve ^{[1
]}

Selmi, Luca ^{[3
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] Inst Microelect Electromagnet & Photon Lab Hyperf, F-38016 Grenoble, France

[3] Univ Udine, I-33100 Udine, Italy

[4] IMEP LAHC, F-38016 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期

关键词：

Carrier-carrier scattering; channel hot electron injection (CHEI); full-band Monte Carlo (MC); lucky electron model (LEM); semi-analytic model; SPHERICAL-HARMONICS EXPANSION; GATE CURRENT; TEMPERATURE-DEPENDENCE; ENERGY-DISTRIBUTION; BAND-STRUCTURE; TRANSPORT; SILICON; SIMULATION; INJECTION; EMISSION;

D O I：

10.1109/TED.2012.2183600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier-carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical NOR flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths.

引用

页码：983 / 993

页数：11

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[1] Electron energy distributions in silicon structures at low applied Voltages and high electric fields [J].