Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles

被引：39

作者：

Jang, Lee-Woon ^{[1
,2
]}

Jeon, Dae-Woo ^{[1
,2
]}

Sahoo, Trilochan ^{[1
,2
]}

Jo, Dong-Seob ^{[1
,2
]}

Ju, Jin-Woo ^{[3
]}

Lee, Seung-jae ^{[3
]}

Baek, Jong-Hyeob ^{[3
]}

Yang, Jin-Kyu ^{[4
]}

Song, Jung-Hoon ^{[5
]}

Polyakov, Alexander Y. ^{[1
,2
]}

Lee, In-Hwan ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea

[3] Korea Photon Technol Inst, LED Device Team, Kwangju 500779, South Korea

[4] Kongju Natl Univ, Dept Opt Engn, Kong Ju 701, South Korea

[5] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

SUBWAVELENGTH OPTICS; LIGHT; NANOWIRES; PHOTOLUMINESCENCE; FLUORESCENCE; SPECTROSCOPY; RESONANCES; METALS;

D O I：

10.1364/OE.20.002116

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode. (C)2012 Optical Society of America

引用

页码：2116 / 2123

页数：8

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