EUVL mask inspection using 193-nm wavelength for 30-nm node and beyond

被引：4

作者：

Na, Jihoon ^{[1
]}

Cho, Wonil ^{[1
]}

Kim, Tae-Geun ^{[1
]}

Kang, In-Yong ^{[1
]}

Cha, Byungcheol ^{[1
]}

Shin, Inkyun ^{[1
]}

Cho, Han-Ku ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Photomask Team, Hwasung City 445701, Gyeonggi Do, South Korea

来源：

PHOTOMASK TECHNOLOGY 2011 | 2011年 / 8166卷

关键词：

EUV lithography; EUVL mask; Mask Inspection; Mask Defect; Defect contrast;

D O I：

10.1117/12.898896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report inspection results of EUVL masks with 193nm wavelength tools for 30nm and 24nm half-pitch nodes. The dense line and space and contact pattern is considered to study inspection capability. The evaluation includes defect contrast variation depending on illumination conditions, defect types, and design nodes. We show many inspection images with various optic conditions. Consequently, the detection sensitivity is affected by contrast variation of defects. The detection sensitivity and wafer printability are addressed with a programmed defect mask and a production mask. With these results, we want to discuss the capability of current EUVL mask inspection tools and the future direction.

引用

页数：11

共 11 条

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