SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

被引：19

作者：

Boige, F. ^{[1
]}

Richardeau, F. ^{[1
]}

Lefebvre, S. ^{[2
]}

Cousineau, M. ^{[1
]}

机构：

[1] Univ Toulouse, LAPLACE, CNRS, INPT,UPS, Toulouse, France

[2] ENS Paris Saclay, CNRS, SATIE, CNAM, 61 Av President Wilson, F-94234 Cachan, France

来源：

MATHEMATICS AND COMPUTERS IN SIMULATION | 2019年 / 158卷

关键词：

Electrothermal simulation; Model validation; MOSFET; Short-circuit; Silicon carbide;

D O I：

10.1016/j.matcom.2018.09.020

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The purpose of this paper is to describe, for the first time, a global transient electrothermal model of (SiC) power MOSFETs during accidental short-circuit (SC) operations. The developed models allow to analyse an inverter-leg malfunctioning. A thermal model of the SiC MOSFET dies combined with extensive experimentations allow to develop models of the gate leakage current and of the drain saturation current during SC events. After verifying the robustness of the proposed elementary models, an original global circuit model with an easy implementation using a commercial circuit simulation tool is proposed and discussed. This circuit model can be used in order to develop protection schemes against SC faults. (C) 2018 International Association for Mathematics and Computers in Simulation (IMACS). Published by Elsevier B.V. All rights reserved.

引用

页码：375 / 386

页数：12

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