Very high residual resistivity ratios of heteroepitaxial superconducting niobium films on MgO substrates

被引：21

作者：

Krishnan, M. ^{[1
]}

Valderrama, E. ^{[1
]}

Bures, B. ^{[1
]}

Wilson-Elliott, K. ^{[1
]}

Zhao, X. ^{[2
]}

Phillips, L. ^{[2
]}

Valente-Feliciano, A-M ^{[2
]}

Spradlin, J. ^{[2
]}

Reece, C. ^{[2
]}

Seo, K. ^{[3
]}

机构：

[1] Alameda Appl Sci Corp, San Leandro, CA 94577 USA

[2] Thomas Jefferson Natl Accelerator Facil, Jefferson Lab, Newport News, VA 23606 USA

[3] Norfolk State Univ, Norfolk, VA 23504 USA

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2011年 / 24卷 / 11期

关键词：

THIN-FILMS; VACUUM; NB;

D O I：

10.1088/0953-2048/24/11/115002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report residual resistivity ratio (RRR) values (up to RRR-541) measured in thin film Nb grown on MgO crystal substrates, using a vacuum arc discharge, whose 60-160 eV Nb ions drive heteroepitaxial crystal growth. The RRR depends strongly upon substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that, as the crystal structure of the Nb film becomes more ordered, RRR increases, consistent with fewer defects or impurities in the lattice and hence longer electron mean free path. A transition from Nb(110) to purely Nb(100) crystal orientation on the MgO(100) lattice occurs at higher temperature.

引用

页数：6

共 26 条

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