Neutron sensitivity of high voltage SiC devices for avionics applications

被引：2
|
作者：
Weulersse, C. [1 ]
Mazurek, M. [2 ]
Morand, S. [3 ]
Binois, C. [3 ]
Crepel, O. [4 ]
机构：
[1] Airbus Def & Space, F-31025 Toulouse, France
[2] Airbus Operat SAS, F-31060 Toulouse, France
[3] Airbus Def & Space, F-78996 Elancourt, France
[4] Airbus SAS, F-31025 Toulouse, France
来源：
2020 20TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS 2020) | 2022年
关键词：
Single Event Burn Out; SiC MOSFET; Neutrons; Safe Operating Area; SINGLE-EVENT BURNOUT;
D O I：
10.1109/RADECS50773.2020.9857698
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The SEE radiation tolerance of power SiC devices from several manufacturers has been studied. Safe Operating Areas, as well as failure rates at aircraft altitudes, have been characterized through testing at ChipIr facility, in order to validate the common used derating value of 50%.
引用
收藏
页码：122 / 126
页数：5
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