Design and simulation of high figure of merit plasmonic resonance sensor

被引:0
作者
Huang, Xiaodan [1 ]
Jiang, Xingfang [2 ]
Qiu, Chao [1 ]
Ji, Xiaofeng [1 ]
Wang, Shijun [1 ]
Shao, Guojian [3 ]
机构
[1] Changzhou Vocat Inst Mechatron Technol, Profess Basic Dept, Changzhou, Peoples R China
[2] Changzhou Univ, Sch Microelect & Control Engn, Changzhou, Peoples R China
[3] Nanjing Elect Devices Inst, Nanjing, Peoples R China
关键词
plasmonic lattice resonance; sensors; figure of merit; localized surface plasmonic resonance; diffraction; ARRAYS; SUBSTRATE; PARTICLES;
D O I
10.1117/1.JNP.16.016007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Periodic metallic nanoparticle arrays have a wide range of applications in sensors due to the generation of the plasmonic lattice resonance (PLR). To increase the figure of merit (FOM) of periodic metallic nanoparticle arrays, schemes to reduce full-width at half maximum (FWHM) are necessary. Introducing silicon and dielectric nanopillars under metallic nanoparticles has been suggested as a feasible route to reducing FWHM and thus enhancing FOM. However, many factors may lead to a reduction in FOM. Thus, different factors, such as the diameter and height of metallic nanoparticles, the diameter and height of silicon nanopillars, the height of dielectric nanopillars, and the period of the arrays, should be explored to improve FOM of this structure. We investigate the influences of different structural parameters on FOM of Ag/Si/SiO2 nanopillar array sensors. Results show that a larger diameter of the Ag nanopillars widens the FWHM and weakens the FOM. The optimal diameter of Si nanopillars and the optimal height of Ag nanopillars to obtain a high FOM are all 100 nm. The period of larger arrays corresponds to a narrower FWHM and higher FOM. A larger height of Si nanopillars or a larger height of SiO2 nanopillars decreases the FWHM and increases the FOM. These results are relatively instructive and meaningful for the design of PLR sensors with a high FOM. (C) 2022 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:10
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