Acceptor profile control in GaAs using co-implantation of Zn and P

被引：4

作者：

Hutchinson, S

Gwilliam, R

Kelly, MJ ^{[1
]}

Sealy, BJ

Chew, A

Stephens, J

机构：

[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Surrey Res Ctr Ion Beam Applicat, Guildford GU2 5XH, Surrey, England

[2] Loughborough Surface Anal Ltd, Loughborough LE11 3WS, Leics, England

[3] EEV Ltd, Lincoln LN1 1SF, Lincs, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

implantation; acceptor control; GaAs; dopants;

D O I：

10.1016/S0168-583X(98)00674-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

While co-implantation is well known as a means of dopant control in GaAs, we have examined the effect of displacing the two implant profiles with Zn as the acceptor and P as the co-implant, We have established that lower resistivities, comparable sheet resistances and higher mobilities can be achieved when Zn is implanted into the surface tail of a deep P implant, as compared with Zn being implanted to overlap a shallower P implant. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：459 / 462

页数：4

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