An electro-mechanical analysis of the anodic bond process for microelectromechanical systems

Anodic bonding has developed into a common manufacturing process for the assembly of microelectromechanical systems (MEMS). It has been used to bond etched silicon miscrostructures to electrical interconnect wafers, which can be glass or silicon with an oxide layer. In another case, the anodic bond is used to provide wafer-level packaging of a MEMS device. The integrity and quality of the bond depend on many process parameters including the temperature and voltage. The voltage is important for developing the interfacial contact forces that increase the contact area by overcoming surface roughness, debris, or other surface topography. In this paper, we investigate the effects of the silicon micromachined geometry on the interfacial forces, silicon deformations, and interfacial stresses. It illustrates the strong dependence of the stress and deformation on the geometry and the importance this analysis.