Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems

被引：1

作者：

Buchwald, Walter R. ^{[1
,2
]}

Cleary, Justin W. ^{[3
]}

Hendrickson, Joshua ^{[3
]}

机构：

[1] Solid State Sci Corp, Nashua, NH 03060 USA

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[3] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

aluminium compounds; conduction bands; electron gas; etching; Fourier transform spectra; gallium arsenide; III-V semiconductors; semiconductor quantum wells; transmission electron microscopy;

D O I：

10.1063/1.3680232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modification of quantum well inter-sub-band absorption properties due to surface depletion induced band bending is reported. Fourier transform infrared spectroscopy measurements of a GaAs/AlAs multiple quantum well system reveal a reduction in the characteristic absorption resonance in correlation with wet chemical etching. High resolution transmission electron microscopy confirms the presence of the quantum wells after etching, suggesting the quantum wells are positioned within the surface depletion region of the structure. This method of inter-sub-band absorption modification could be used for the formation of quantum dots from a quantum well system with the precise, deterministic control of their location.(C) 2012 American Institute of Physics. [doi: 10.1063/1.3680232]

引用

页数：3

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