Effect of systematic resonance on DBD device

被引：3

作者：

Yang, X ^{[1
]}

Zhang, ZT ^{[1
]}

Cheng, L ^{[1
]}

Yu, X ^{[1
]}

机构：

[1] Dalian Maritime Univ, Key Lab Strong Elect Field Ionizat Discharge Liao, Dalian 116026, Peoples R China

来源：

PLASMA SCIENCE & TECHNOLOGY | 2005年 / 7卷 / 05期

关键词：

dielectric barrier discharge; DBD resonance; low temperature plasma;

D O I：

10.1088/1009-0630/7/5/012

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Abnormal phenomena that discharge performance declines with the increase in the frequency of power supply have been observed in many DBD devices. DBD systematic resonance formed by transformer leakage induction and equivalent capacitance of the dielectric layer is a key factor causing such abnormal phenomena. Therefore, the parameters of a DBD device should be optimized to avoid resonance damage and improve DBD discharge characteristics.

引用

页码：3030 / 3032

页数：3

共 4 条

[1] On the influence of metastable reactions on rotational temperatures in dielectric barrier discharges in He-N2 mixtures [J].