FPIX2: a radiation-hard pixel readout chip for BTeV

被引:28
作者
Christian, DC [1 ]
Appel, JA [1 ]
Cancelo, G [1 ]
Hoff, J [1 ]
Kwan, S [1 ]
Mekkaoui, A [1 ]
Yarema, R [1 ]
Wester, W [1 ]
Zimmermann, S [1 ]
机构
[1] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA
关键词
D O I
10.1016/S0168-9002(01)01137-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A radiation-hard pixel readout chip, FPIX2, is being developed at Fermilab for the recently approved BTeV experiment [A. Kulyavtsev, et al., Proposal for an Experiment to Measure Mixing, CP Violation and Rare Decays in Charm and Beauty Particle Decays at the Fermilab Collider (2000), http://www.btev.fnal.gov/public_documents/ btev-proposal/]. Although designed for BTeV, this chip should also be appropriate for use by CDF and DZero. A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned. The results (including the effects of irradiation to similar to 33 Mrad) of initial tests of prototype 0.25 mum CMOS devices are presented. as are plans for the balance of the development effort. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:152 / 156
页数:5
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