Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy

被引：9

作者：

Sidorov, G. Yu. ^{[1
]}

Mikhailov, N. N. ^{[1
]}

Varavin, V. S. ^{[1
]}

Ikusov, D. G. ^{[1
]}

Sidorov, Yu. G. ^{[1
]}

Dvoretskii, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 06期

关键词：

D O I：

10.1134/S1063782608060043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CdxHg1-x Te films with x approximate to 0.22 and thickness of similar to 10 mu m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10(17) cm(-3). The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.

引用

页码：651 / 654

页数：4

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