Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy

被引：9

作者：

Sidorov, G. Yu. ^{[1
]}

Mikhailov, N. N. ^{[1
]}

Varavin, V. S. ^{[1
]}

Ikusov, D. G. ^{[1
]}

Sidorov, Yu. G. ^{[1
]}

Dvoretskii, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 06期

关键词：

D O I：

10.1134/S1063782608060043

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CdxHg1-x Te films with x approximate to 0.22 and thickness of similar to 10 mu m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10(17) cm(-3). The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.

引用

页码：651 / 654

页数：4

共 50 条

[31] Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
V. V. Chaldyshev
V. V. Preobrazhenskii
M. A. Putyato
B. R. Semyagin
N. A. Bert
A. E. Kunitsyn
Yu. G. Musikhin
V. V. Tret’yakov
P. Werner
Semiconductors, 1998, 32 : 1036 - 1039
[32] Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide
Muthuvenkatraman, S
Gorantla, S
Venkat, R
Dorsey, DL
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5845 - 5851
[33] Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
I. I. Izhnin
K. D. Mynbaev
M. V. Yakushev
A. I. Izhnin
E. I. Fitsych
N. L. Bazhenov
A. V. Shilyaev
H. V. Savitskyy
R. Jakiela
A. V. Sorochkin
V. S. Varavin
S. A. Dvoretsky
Semiconductors, 2012, 46 : 1341 - 1345
[34] Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
Izhnin, I. I.
Mynbaev, K. D.
Yakushev, M. V.
Izhnin, A. I.
Fitsych, E. I.
Bazhenov, N. L.
Shilyaev, A. V.
Savitskyy, H. V.
Jakiela, R.
Sorochkin, A. V.
Varavin, V. S.
Dvoretsky, S. A.
SEMICONDUCTORS, 2012, 46 (10) : 1341 - 1345
[35] High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy
K. D. Mynbaev
N. L. Bazhenov
A. V. Shilyaev
S. A. Dvoretskii
N. N. Mikhailov
M. V. Yakushev
V. G. Remesnik
V. S. Varavin
Technical Physics, 2013, 58 : 1536 - 1539
[36] High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy
Mynbaev, K. D.
Bazhenov, N. L.
Shilyaev, A. V.
Dvoretskii, S. A.
Mikhailov, N. N.
Yakushev, M. V.
Remesnik, V. G.
Varavin, V. S.
TECHNICAL PHYSICS, 2013, 58 (10) : 1536 - 1539
[37] BAFFLE-FREE REFRACTORY DIMER ARSENIC SOURCE FOR MOLECULAR-BEAM EPITAXY
MATTORD, TJ
KESAN, VP
CROOK, GE
BLOCK, TR
CAMPBELL, AC
NEIKIRK, DP
STREETMAN, BG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1667 - 1670
[38] ARSENIC REFLECTION FROM GAAS AND ALGAAS SURFACES DURING MOLECULAR-BEAM EPITAXY
THORPE, AJS
ARENT, DJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 783 - 786
[39] ARSENIC-DOPED CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
HARPER, RL
HWANG, S
GILES, NC
SCHETZINA, JF
DREIFUS, DL
MYERS, TH
APPLIED PHYSICS LETTERS, 1989, 54 (02) : 170 - 172
[40] ARSENIC INCORPORATION AND DOPING BEHAVIOR IN SILICON AND SIGE EPITAXIAL LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
FERNANDEZ, JM
XIE, MH
MATSUMURA, A
MOKLER, SM
ZHANG, J
JOYCE, BA
MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (04) : 396 - 399

← 1 2 3 4 5 →