Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy

被引：9
|
作者：
Sidorov, G. Yu. [1 ]
Mikhailov, N. N. [1 ]
Varavin, V. S. [1 ]
Ikusov, D. G. [1 ]
Sidorov, Yu. G. [1 ]
Dvoretskii, S. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 06期
关键词：
D O I：
10.1134/S1063782608060043
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
CdxHg1-x Te films with x approximate to 0.22 and thickness of similar to 10 mu m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10(17) cm(-3). The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.
引用
收藏
页码：651 / 654
页数：4
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