Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy

被引：9
作者：
Sidorov, G. Yu. [1 ]
Mikhailov, N. N. [1 ]
Varavin, V. S. [1 ]
Ikusov, D. G. [1 ]
Sidorov, Yu. G. [1 ]
Dvoretskii, S. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 06期
关键词：
D O I：
10.1134/S1063782608060043
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
CdxHg1-x Te films with x approximate to 0.22 and thickness of similar to 10 mu m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10(17) cm(-3). The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.
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页码：651 / 654
页数：4
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