Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy

CdxHg1-x Te films with x approximate to 0.22 and thickness of similar to 10 mu m have been grown by molecular-beam epitaxy on gallium arsenide substrates and doped in situ with arsenic. Activation annealing of doped films provided p-type conduction with a hole density of up to 10(17) cm(-3). The influence exerted by the arsenic cracking zone temperature on the efficiency of arsenic incorporation into the CdHgTe film was studied. A model describing the dependence of the arsenic concentration in the films on the arsenic cracking zone temperature was suggested. A comparison of the model and the experimental data demonstrated that the incorporation efficiency of diatomic arsenic is approximately two orders of magnitude higher than that of tetratomic arsenic.