Electronic structure of a (3x3)-ordered silicon layer on Al(111)

被引：9

作者：

Sato, Yusuke ^{[1
]}

Fukaya, Yuki ^{[2
]}

Cameau, Mathis ^{[3
,4
]}

Kundu, Asish K. ^{[5
]}

Shiga, Daisuke ^{[6
,7
]}

Yukawa, Ryu ^{[6
]}

Horiba, Koji ^{[6
]}

Chen, Chin-Hsuan ^{[8
]}

Huang, Angus ^{[8
]}

Jeng, Horng-Tay ^{[8
,9
,10
]}

Ozaki, Taisuke ^{[1
]}

Kumigashira, Hiroshi ^{[6
,7
]}

Niibe, Masahito ^{[1
,11
]}

Matsuda, Iwao ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys ISSP, Kashiwa, Chiba 2778581, Japan

[2] Japan Atom Energy Agcy, Adv Sci Res Ctr, 2-4 Shirakata, Naka, Ibaraki 3191195, Japan

[3] Sorbonne Univ, Inst NanoSci Paris, F-70005 Paris, France

[4] Sorbonne Univ, INst Mineral Phys Mat & Cosmochim, F-70005 Paris, France

[5] CNR, Ist Struttura Mat, Str Statale 14 Km 163-5, I-34149 Trieste, Italy

[6] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

[7] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[8] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[9] Natl Ctr Theoret Sci, Phys Div, Hsinchu 30013, Taiwan

[10] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[11] Univ Hyogo, Lab Adv Sci & Technol Ind, 3-1-2 Koto, Kamigori, Hyogo 6781205, Japan

来源：

PHYSICAL REVIEW MATERIALS | 2020年 / 4卷 / 06期

基金：

日本学术振兴会;

关键词：

INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; SURFACES; TRANSITION; METALS; STATES; SI;

D O I：

10.1103/PhysRevMaterials.4.064005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of the (3x3)-ordered phase of a silicon (Si) layer on Al(111) has been studied by angle-resolved photoemission spectroscopy using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from a linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac-cone-like dispersion curve. The Si layer on Al(111) can be a model system of Xenes to realize the massless electronic system through the overlayer-substrate interaction.

引用

页数：6

共 50 条

[41] Atomic and electronic structures of Si(111)-(√3x √3)R30°-Au and (6 x 6)-Au surfaces
Patterson, C. H.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (47)
[42] Surface structure of the 3 x 3-Si phase on Al(111), studied by the multiple usages of positron diffraction and core-level photoemission spectroscopy
Sato, Yusuke
Fukaya, Yuki
Nakano, Akito
Hoshi, Takeo
Lee, Chi-Cheng
Yoshimi, Kazuyoshi
Ozaki, Taisuke
Nakashima, Takeru
Ando, Yasunobu
Aoyama, Hiroaki
Abukawa, Tadashi
Tsujikawa, Yuki
Horio, Masafumi
Niibe, Masahito
Komori, Fumio
Matsuda, Iwao
PHYSICAL REVIEW MATERIALS, 2025, 9 (01):
[43] Surface Electronic/Atomic Structure and Activation Energy on Pt(111), Pt3Cu(111), and PtCu(111) for PEFC Cathode
Ichiya, Takashi
Koiwa, Nobuki
Ohma, Atsushi
Tada, Shigeru
Fushinobu, Kazuyoshi
Okazaki, Ken
NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING, 2010, 14 (02) : 110 - 122
[44] Ni3InSb: Synthesis, Crystal Structure, Electronic Structure, and Magnetic Properties
Kuila, Sandip K.
Harshit
Roy, Nilanjan
Ghanta, Sivaprasad
Pan, Rahul
Buxi, Krishnendu
Pramanik, Parna
Bera, Anup K.
Saha, Bikash
Yusuf, Seikh M.
Petricek, Vaclav
Roy, Ahin
Jana, Partha Pratim
INORGANIC CHEMISTRY, 2023, 62 (19) : 7304 - 7314
[45] Local electronic structure of doping defects on Tl/Si(111)1x1
Pieczyrak, Barbara
Jurczyszyn, Leszek
Sobotik, Pavel
Ost'adal, Ivan
Kocan, Pavel
SCIENTIFIC REPORTS, 2019, 9 (1)
[46] The growth of an ordered Mn layer on the Si(111)-1 x 1-Ho surface
Reakes, Michael B.
Eames, Chris
Tear, Steve P.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (26)
[47] Unconventional superconductivity in the single-atom-layer alloy Si(111)-√3 x √3-(Tl, Pb)
Nakamura, T.
Kim, H.
Ichinokura, S.
Takayama, A.
Zotov, A., V
Saranin, A. A.
Hasegawa, Y.
Hasegawa, S.
PHYSICAL REVIEW B, 2018, 98 (13)
[48] Superexchange interaction in the A-site ordered perovskite YMn3Al4O12
Toyoda, Masayuki
Saito, Takashi
Yamauchi, Kunihiko
Shimakawa, Yuichi
Oguchi, Tamio
PHYSICAL REVIEW B, 2015, 92 (01):
[49] Surface X-ray Scattering of Stepped Surfaces of Platinum in an Electrochemical Environment: Pt(331)=3(111)-(111) and Pt(511)=3(100)-(111)
Hoshi, Nagahiro
Nakamura, Masashi
Sakata, Osami
Nakahara, Akira
Naito, Keita
Ogata, Hiroyuki
LANGMUIR, 2011, 27 (07) : 4236 - 4242
[50] Correlation between Morphological Structure and Optoelectronic Properties of Al2O3thin layer coated silicon nanowires
Hajjaji, A.
Amri, C.
Rebhi, A.
Gaidi, M.
Ouertani, R.
Amlouk, M.
Bessais, B.
El Khakani, M. A.
SILICON, 2021, 13 (12) : 4323 - 4329

← 1 2 3 4 5 →