Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies

被引：189
作者：
Hauser, A. J. [1 ]
Zhang, J. [1 ,2 ,3 ]
Mier, L. [2 ]
Ricciardo, R. A. [2 ]
Woodward, P. M. [2 ]
Gustafson, T. L. [2 ]
Brillson, L. J. [1 ,3 ]
Yang, F. Y. [1 ]
机构：
[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[2] Ohio State Univ, Dept Chem, Columbus, OH 43210 USA
[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期
关键词：
D O I：
10.1063/1.2939101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
UV-visible absorption and cathodoluminescence spectra of phase-pure epitaxial BiFeO(3) thin films grown on SrTiO(3)(001) substrates by ultrahigh vacuum sputtering reveal a bandgap of 2.69-2.73 eV for highly strained similar to 70 nm thick BiFeO(3) films. This bandgap value agrees with theoretical calculations and recent experimental results of epitaxial BiFeO(3) films, demonstrating only minimal bandgap change with lattice distortion. Both absorption and cathodoluminescence spectra show defect transitions at 2.20 and 2.45 eV, of which the latter can be attributed to defect states due to oxygen vacancies. (c) 2008 American Institute of Physics.
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